Memristor 1T-SRAM with Adiabatic Driving
نویسندگان
چکیده
This paper proposes a novel adiabatic static random access memory (SRAM) using memristor. The proposed SRAM which is a sinusoidal driving consists of one NMOS transistor and one memristor (i.e. 1T1M type). The proposed SRAM also is driven by an optimal voltage resulting in a decrease of energy dissipation. From SPICE simulation results, we show that the energy dissipation of proposed 1T1M-SRAM with a sinusoidal driving voltage is lower than that of the conventional pseudo-SRAM called 1T1C, and the proposed circuit is especially effective against reducing power consumption at logic Hi-state. Keywords—SRAM, pseudo SRAM, memristor, adiabatic, low power
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